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Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

机译：SiGe / Si栅极法向隧穿场效应晶体管中隧穿路径的实验检查

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Glass, S.; von den Driesch, N.; Strangio, S.; Schulte-Braucks, C.; Rieger, T.; Narimani, K.; Buca, D.; Mantl, S.; Zhao, Q. T.;
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1. Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors [J] . S. Glass, N. von den Driesch, S. Strangio, Applied Physics Letters . 2017,第26期

机译：SiGe / Si栅极法向隧穿场效应晶体管中隧穿路径的实验检查
2. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors [J] . Kao Kuo-Hsing, Verhulst Anne S., Rooyackers Rita, Journal of Applied Physics . 2014,第21期

机译：基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
3. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors [J] . Kuo-Hsing Kao, Anne S. Verhulst, Rita Rooyackers, Journal of Applied Physics . 2014,第21期

机译：基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
4. Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit [C] . Yung Hun Jung, In Man Kang, Seongjae Cho Progress in electromagnetics research symposium . 2018

机译：通过小信号等效电路分析微波状态下的SiGe异质结隧穿场效应晶体管
5. A Quantum Simulation Study of III-V Esaki Diodes and 2D Tunneling Field-effect Transistors [D] . Cadareanu, Patsy. 2018

机译：III-V Esaki二极管和2D隧穿场效应晶体管的量子模拟研究
6. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor [O] . Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, -1

机译：基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
7. Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors [O] . Kao Kuo-Hsing, Verhulst Anne, Rooyackers Rita, 2014

机译：基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景

Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

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